Transforming the Economics of Storage

Intel® 3D NAND Technology extends our leadership in flash memory with an architecture designed for higher capacity and optimal performance, a proven manufacturing process providing accelerated transitions and scaling, and rapid portfolio expansion for multiple market segments.

Storage Capacity Empowered by Intel® Innovation

Intel introduces the world's first PCIe* SSDs with QLC technology. Intel® QLC 3D NAND Technology provides up to 33% higher capacity1 than its 3D NAND predecessor. It also uniquely features PCIe* acceleration, to deliver a reliable mix of performance, capacity, and value-making it a smart storage solution for both datacenter and client markets.

Intel® QLC Technology leverages current 3D NAND, with a proven 64-layer structure, and adds a new cell that provides 4bits/cell (QLC), making it the world's highest-density flash memory. Additionally, this technology uses a floating gate cell because it is a reliable, low-cost storage method. Last, Intel® QLC Technology was paired with PCIe*- (NVMe*) technology, to provide up to a 4x performance benefit over SATA interfaces.2

Prepare for the future with Intel QLC-built on reliable Intel® technology and backed by Intel manufacturing leadership.

Finally, SSD Performance Meets Big Business Value

For datacenters, Intel® QLC 3D NAND Technology radically shrinks HDD system footprints.3 Fewer systems to maintain lead to power and cooling savings4, while also reducing operation and capital costs associated with drive replacements.5 And while footprint goes down, performance goes up.6 PCIe* acceleration blasts through SATA bottlenecks7, unleashing the full power of QLC. When coupled with optional Intel® Optane™ technology, Intel® 3D NAND Technology datacenter products deliver even better performance2, accelerating access to data needed most.

Do more, store more, and save more with Intel® QLC Technology featured in the Intel® SSDs D5-P4320 and D5-P4326 Series-Currently shipping in limited quantities and available broadly winter, 2018.

Amazing Is Now Affordable

Intel® QLC 3D NAND Technology enables consumers to tackle today's storage needs and prepare for the growing demands of tomorrow. These client SSDs pack in more data than TLC-based storage, allowing up to 2x more capacity in identical footprints.1 Only Intel coupled this game-changing technology with PCIe* to deliver affordable PCIe performance.

Shop Intel® QLC 3D NAND SSD

Architected for Capacity and Reliability

Intel® 3D NAND Technology is an innovative response to the industry's growing demand for data storage capacity. Compared to other available NAND solutions, Intel® 3D NAND Technology is designed on floating gate architecture with a smaller cell size and a highly efficient memory array, which enables higher capacity solutions and high reliability with strong protection from charge loss.

See How 3D NAND Advances Storage

Intel® 3D NAND Technology accelerates Moore's Law into three dimensions, overcoming the capacity limitations of traditional 2D NAND technology. The vertical layering of our 3D NAND enables higher areal density today, with scalability for the future.

Innovation Leadership

64-Layer Breakthrough

Intel has applied 30 years of flash cell experience to transition NAND from 2D to 3D, multi-level cell (MLC) to tri-level cell (TLC), and 32-layer to our breakthrough 64-layer technology. All of this is done to deliver the highest areal density8 and rapidly grow storage capacities in 3D NAND solutions.

Expansive Portfolio

Built on a Proven Process

With 3D NAND technology, Intel delivers innovative, high-value capabilities into a broad product portfolio. Our experience of designing this architecture into SSD solutions enables us to rapidly improve performance, power consumption, performance consistency, and reliability with each generation.

Manufacturing Scalability

Enabling Disruptive Opportunities

Intel is using manufacturing processes proven by decades of high volume output to build 3D NAND technology. With strong generational synergy across our factory network, Intel expects to grow 3D NAND capacity faster than the market, enabling us to deliver disruptive total cost of ownership and application acceleration to our customer base.



三層單元 (tri-level cell, TLC) 每單元含有 3 位元的資訊,而四層單元 (quad level cell, QLC) 每單元含有 4 單元的資訊。計算為每單元多出 (4-3)/3 = 33% 位元。



4 節點 vSAN 叢集 – 1 節點系統組態:伺服器型號:Intel Purley S2600WF (R2208WFTZS);MB:H48104-850;CPU:兩個 Intel® Xeon® Gold 6142 2.6G 處理器,16C/32T,10.4GT/s,22M 快取記憶體,渦輪加速,HT (150W) DDR4-2666;記憶體:16GB RDIMM,2666MT/s,Dual Rank x16;NIC:Intel X520-DA2 10GbE SFP+ DAC 和嵌入式 Intel X722 10GbE LAN。所有 TLC 組態:2x Intel® SSD Data Center P4610 系列 1.6TB 用於快取,4x Intel® SSD Data Center P4510 系列 4.0TB 用於容量儲存;Intel® Optane™ memory+QLC 組態:2x Intel® Optane™ SSD DC P4800X 375GB 用於快取,2x Intel® SSD D5-P4320 7.68TB 用於容量儲存。2 工作負載:HCIBench:。 VM 數量:16,資料磁碟數量:8,資料磁碟大小:60,測試磁碟數量:8,工作集百分比:100,每磁碟執行緒數量:4,區塊大小:4K,讀取百分比:70,隨機百分比:50,測試時間:3600。結果:P4610+P4510 組態 = 83,451 IOPS @ 6.3ms 延遲。P4800x+P43220 組態 = 346,644 IOPS @ 1.52ms 延遲。 



比較 3.5 吋 4TB WD Gold TB 企業級 7200 RPM HDD(每 2U 可啟用最多 24 個 HDD,最大總額為 20U 和 960TB)和 30.72TB E1.L Intel® SSD D-5 P4326(將於日後推出,每 1U 可啟用最多 32 個 SSD,最大總額為 1U 和 983TB)。因此為 20 機架單位比 1 機架單位。



電力、冷卻、整合成本節省。根據於 HDD:7.2K RPM 4TB HDD,2.00% AFR 和 7.7W 有效功率,2U 中 24 個磁碟機(1971W 總功率) SSD:22W 有效功率,44% AFR,1U 中 32 個磁碟機(704W 總功率);冷卻成本係根據 5 年期的部署成本,1 Kwh 0.158 美元以及冷卻 1 瓦所需要的瓦數 1.20 根據於 3.5 吋 HDD 2U 24 磁碟和 EDSFF 1U 長 1U 32 磁碟。使用 Intel® TLC SSD 於快取記憶體的混合儲存裝置。



磁碟更換成本節省。計算:HDD 2% AFR x 256 個磁碟機 x 5 年 = 5 年更換 25.6 次;SSD:0.44% AFR x 32 個磁碟機 x 5 年 = 5 年更換 0.7 次。



比較 Intel D5-P4320 SSD 和 Toshiba N300 HDD 的 4K 隨機讀取 IOPS 和佇列深度 32。175,000 IOPS:從 Intel D5-P4320 7.68TB SSD 所測量的資料。4K 隨機讀取 IOPS;佇列深度 32。532 IOPS:根據 Tom’s Hardware 的 Toshiba N300 8TB 7.2K RPM HDD 效能標竿數據。4K 隨機讀取 IOPs;佇列深度 32:,5277-2.html。因此 4K 隨機讀取 IOPS 好上 329 倍。



PCIe* IOPS 係根據於模擬的 4K 隨機讀取,佇列深度 256、效能估計由 Intel 針對基於 Intel D5-P4320/D5-P4326 PCIe* 的 QLC SSD 以不同的容量進行:3.84TB、7.68TB、15.36TB 和 30.72TB。SATA IOPS 針對所有容量點設為 100K IOPS,此係根據目前 Micron 的競品 SATA 型 SSD 最大為 100K IOPS。Micron 5200 系列 NAND Flash SSD 資料表顯示 3.84TB 和 7.68TB 的 SKU 最大 4K 隨機讀取 QD32 IOP 為 95K IOPS。資料表位於此處:{1E253C11-6399-4D14-A445-F1DE2EB7ECAC}



比較由 Intel 所測量 512 GB Intel® 3D NAND 的面密度和具代表性的競品面密度,競品係根據 2017 IEEE International Solid-State Circuits Conference 之報告,其中提及 Samsung Electronics 與 Western Digital/Toshiba 的 64 層堆疊 3D NAND 元件晶粒大小。